Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum -: art. no. 085326

被引：33

作者：

Brunkov, PN ^{[1
]}

Patanè, A

Levin, A

Eaves, L

Main, PC

Musikhin, YG

Volovik, BV

Zhukov, AE

Ustinov, VM

Konnikov, SG

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.65.085326

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present photocurrent, capacitance, and photoluminescence studies of GaAs-based Schottky barrier structures incorporating InAs self-assembled quantum dots. We. show that the photocurrent is mainly controlled by thermal escape of electrons out of the dots and is suppressed at low temperatures, below 100 K. At higher temperatures (>185 K), we are able to control the magnitude of the photon absorption, and hence the photocurrent, by varying the bias voltage applied to the device.

引用

页码：1 / 6

页数：6

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