An infrared reflection technique for characterization of GaN epitaxial films

被引：1

作者：

Bardwell, JA ^{[1
]}

Dharma-wardana, MWC ^{[1
]}

Leathem, B ^{[1
]}

Moisa, S ^{[1
]}

Webb, JB ^{[1
]}

Tam, B ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 08期

关键词：

D O I：

10.1149/1.1392442

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An infrared spectroscopic technique has been developed for the characterization of GaN epitaxially grown thin films on sapphire substrates. The technique is complementary to Raman measurements, and provides information on the longitudinal (LO) and transverse optical modes of GaN, and, for thin GaN films, the sapphire substrate. In addition, the free carrier concentration of the GaN can be characterized by analyzing the LO phonon-plasmon coupled mode present in doped samples. For lightly doped films, the GaN film thickness is easily obtained from the Fabry-Perot fringes present in the spectra. (C) 1999 The Electrochemical Society. S0013-4651(98)12-047-5. All rights reserved.

引用

页码：3124 / 3127

页数：4

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