Two local vibrational modes related to hydrogen in GaN

被引：21

作者：

Duan, JQ ^{[1
]}

Zhang, BR ^{[1
]}

Zhang, YX ^{[1
]}

Wang, LP ^{[1
]}

Qin, GG ^{[1
]}

Zhang, GY ^{[1
]}

Tong, YZ ^{[1
]}

Jin, SX ^{[1
]}

Yang, ZJ ^{[1
]}

Zhang, X ^{[1
]}

Xu, ZH ^{[1
]}

机构：

[1] BEIJING UNIV, DEPT CHEM, BEIJING 100871, PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 11期

关键词：

D O I：

10.1063/1.366438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed two absorption bands located at around 1730 and 2960 cm(-1) in the infrared (IR) absorption spectra from undoped GaN samples which are grown using low pressure metalorganic vapor phase epitaxy and irradiated by gamma ray and then exposed to a radio frequency hydrogen plasma. Proton implantation followed by gamma-ray irradiation of the GaN samples can also activate the IR band at around 1730 cm(-1). Based on the experimental results, we tentatively ascribe the 1730 cm(-1) band to the local vibrational modes of Ga-H complexes in the vicinity of N vacancies and the 2960 cm(-1) band to those of either N-H complexes in the vicinity of Ga vacancies or C-H complexes. (C) 1997 American Institute of Physics.

引用

页码：5745 / 5747

页数：3

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