共 17 条
Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors
被引:84
作者:

Majewski, L. A.
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机构:
Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England

Kingsley, J. W.
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Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England

Balocco, C.
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Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England

Song, A. M.
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Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England
机构:
[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England
基金:
英国工程与自然科学研究理事会;
关键词:
D O I:
10.1063/1.2208938
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Bottom-contact organic field-effect transistors (OFETs) based on poly(3-hexylthiophene)-2,5-diyl were fabricated under different process conditions. The devices displayed drastic differences in their ambient-air stability. Whereas it took only about 10 min in air for the off current to increase by one order of magnitude in OFETs prepared with chloroform and hexamethyldisilazane, a 120 min exposure to air caused only a slight degradation of OFETs prepared using 1,2,4-trichlorobenzene, n-octadecyltrichlorosilane, and a heat treatment. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed. (c) 2006 American Institute of Physics.
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