Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures

被引：87

作者：

Lin, HY ^{[1
]}

Chen, YF

Wu, JG

Wang, DI

Chen, CC

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 10764, Taiwan

[2] Natl Taiwan Normal Univ, Dept Chem, Taipei 106, Taiwan

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 16期

关键词：

D O I：

10.1063/1.2197311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-semiconductor core-shell nanostructures have been synthesized to explore the influence of metal nanostructures on the photoluminescence of semiconductors. Up to 40 times enhancement in the emission intensity was observed in the Au-CdS core-shell nanostructures. The mechanism where the excited electrons on Au surface by surface plasmon wave transfer to the conduction band of the CdS shell and recombine with holes in the valence band was proposed to interpret the enhancement. Our model can also be used to explain the quenched emission in FePt-CdS core-shell nanostructures and Au-CdSe nanodumbbells. (c) 2006 American Institute of Physics.

引用

页数：3

共 15 条

[11] Surface-plasmon-enhanced light emitters based on InGaN quantum wells [J].