Simulation of the 'brittle-ductile transition in silicon single crystals using dislocation mechanics' - Comment

被引：3

作者：

Hirsch, PB

Roberts, SG

机构：

[1] Univ of Oxford, Oxford

来源：

SCRIPTA MATERIALIA | 1997年 / 37卷 / 12期

关键词：

D O I：

10.1016/S1359-6462(97)00376-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Y.B. Xin and H.J. Hsia modeled the brittle-ductile transition in silicon single crystals by symmetric emission of edge dislocations at a crack tip in {110}〈110〉 oriented specimens on slip planes passing through the crack tip and normal to the cleavage plane. They took into account the dislocation/dislocation interactions only between dislocations on one side of the crack plane. P.B. Hirsch and S.G. Roberts' comments on Xin and Hsia's paper on the simulation of the brittle-ductile transition in silicon single crystals using dislocation mechanics are presented.

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页码：1901 / 1903

页数：3

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