a-SiCx:H films deposited by plasma-enhanced chemical vapor deposition at low temperature used for moisture and corrosion resistant applications

被引：34

作者：

Jiang, LJ

Chen, X

Wang, XH

Xu, LQ ^{[1
]}

Stubhan, F

Merkel, KH

机构：

[1] Acad Sinica, Shanghai Inst Met, SIM DaimlerChrysler Lab, Shanghai 200050, Peoples R China

[2] DaimlerChrysler AG, Res & Technol, D-60528 Frankfurt, Germany

来源：

THIN SOLID FILMS | 1999年 / 352卷 / 1-2期

关键词：

silicon carbide; plasma processing and deposition; chemical vapour deposition; coatings;

D O I：

10.1016/S0040-6090(99)00363-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous hydrogenated silicon carbide (a-SiCx:H) films were fabricated via plasma-enhanced chemical Vapor deposition (PECVD) at a low substrate temperature. The properties of the him and their correlation with the deposition parameters were investigated with emphasis on moisture and corrosion resistance. The films can be deposited with good uniformity and repeatability. The moisture resistance is mostly influenced by the reactant gas flow ratio; increasing the silane flow enhances the moisture barrier ability of the film. The deposited film is chemically inert, is not oxidized by moisture at 85 degrees C, and remained unattacked after 2 months immersion in water at room temperature. The film is pinhole-free, and has excellent corrosion resistant properties. Thus this material is deemed a good candidate film for moisture and corrosion resistant applications. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：97 / 101

页数：5

共 19 条

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