HfO2-III-Nitride RF Switch With Capacitively Coupled Contacts

被引：9

作者：

Koudymov, Alexei ^{[1
]}

Pala, Nezih ^{[1
]}

Tokranov, V. ^{[2
]}

Oktyabrsky, Serge ^{[2
]}

Gaevski, Mikhail ^{[3
]}

Jain, R. ^{[4
]}

Yang, J. ^{[4
]}

Hu, X. ^{[4
]}

Shur, Michael ^{[1
]}

Gaska, Remis ^{[4
]}

Simin, Grigory ^{[5
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

[2] SUNY Albany, Albany, NY 12222 USA

[3] Princeton Univ, Princeton, NJ 08544 USA

[4] Sensor Elect Technol Inc, Columbia, SC 29209 USA

[5] Univ S Carolina, Columbia, SC 29208 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

基金：

美国国家科学基金会;

关键词：

AlGaN/GaN; capacitive coupling; high-k dielectric; HfO2; radio-frequency (RF) switch; PASSIVATION; HEMTS; OXIDE;

D O I：

10.1109/LED.2009.2017284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the first metal-oxide-semiconductor AlGaN/GaN radio-frequency (RF) switch with capacitively coupled contacts using a HfO2 layer as the gate dielectric and surface passivation layer. The new insulating-gate RF switch has a lower leakage current and can handle higher RF powers than AlGaN/GaN HFET switches.

引用

页码：478 / 480

页数：3

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