Mechanism of current collapse removal in field-plated nitride HFETs

被引：62

作者：

Koudymov, A ^{[1
]}

Adivarahan, V ^{[1
]}

Yang, J ^{[1
]}

Simin, G ^{[1
]}

Khan, AA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 10期

关键词：

current collapse; field-plate (FP); GaN-AlGaN; high-electron mobility transistors (HEMT); high field-effect transistors (HFET); metal-oxide-semiconductor heterojunction field-effect transistor MOSHFET; microwave power;

D O I：

10.1109/LED.2005.855409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental study of the mechanism of RF current collapse removal in high-power nitride-based HFETs is presented. The results show that the conductivity of the dielectric material under the field plate plays a crucial role in the current collapse removal. Identical geometry field plated HFETs differing only in the FP dielectric conductivity show varying degree of current collapse removal. Devices with semiconducting dielectric layers exhibit perfectly linear RF power - drain bias dependence with the output powers of 20 W/mm at 55 V drain bias with essentially no current collapse. A trapped charge discharging model is presented to explain the removal of current collapse in FPd devices.

引用

页码：704 / 706

页数：3

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