Dynamic current-voltage characteristics of III-NHFETs

被引：34

作者：

Koudymov, A ^{[1
]}

Simin, G

Khan, MA

Tarakji, A

Gaska, R

Shur, MS

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Sensor Eelct Technol Inc, Columbia, SC 29209 USA

[3] Rensselaer Polytech Inst, Broadband Ctr, Troy, NY 12180 USA

[4] Rensselaer Polytech Inst, Dept ECSE, Troy, NY 12180 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 11期

关键词：

GaN; AlGaN; HFETs; HEMTs; current collapse;

D O I：

10.1109/LED.2003.818889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparative study of the dynamic current-voltage (DI-V) characteristics of III-N heterojunction and double heterojunction field-effect transistors (HFETs and DHFETs) reveals that the current and RF power collapse in HFETs arise from modulation of device series resistances under large input signal. The model based on space-charge limited current through the depletion regions formed at the gate edges due to the charge trapping explains the DIN behavior and other observations related to the RF current collapse in III-N HFETs.

引用

页码：680 / 682

页数：3

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