AlGaN/InGaN/GaN double heterostructure field-effect transistor

被引：107

作者：

Simin, G ^{[1
]}

Hu, XH

Tarakji, A

Zhang, JP

Koudymov, A

Saygi, S

Yang, JW

Khan, A

Shur, MS

Gaska, R

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Sensor Elect Technol Inc, Latham, NY 12110 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 11A期

关键词：

HEMT; HFET; LP-MOCVD; GaN; InGaN; heterostructure;

D O I：

10.1143/JJAP.40.L1142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Novel, current collapse free, double heterostructure AlGaN/InGaN/GaN field effect transistors (DHFETs) are fabricated on the insulating SiC substrates. The simulations show that a combined effect of the bandgap offsets and polarization charges provides an excellent 2D carrier confinement. These devices demonstrate output RF powers as high as 4.3 W/mm in CW mode. and 6.3 W/mm in the pulsed mode, with the gain compression as low as 4 dB.

引用

页码：L1142 / L1144

页数：3

共 17 条

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