Formation of SiGe nanocrystals in HfO2 using in situ chemical vapor deposition for memory applications

The in situ deposition process of SiGe nanocrystals on SiO2 and HfO2 substrates was studied using Auger electron spectroscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The Ge concentration in SiGe nanocrystals increased with deposition time at equal Si/Ge flow rates. Analysis indicated that the nucleation of Ge takes place preferentially on prenucleated Si on the dielectric. Memory transistors were fabricated using SiGe nanocrystals and HfO2 tunneling/control dielectrics as a gate stack. Memory effects from floating SiGe nanocrystals in HfO2 were clearly observed at room temperature from metal-oxide-semiconductor field effect transistor devices with a threshold voltage shift of about 0.5 V with the application of +4 V. (C) 2004 American Institute of Physics.