On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

被引：28

作者：

Gebauer, J ^{[1
]}

Rudolf, F

Polity, A

Krause-Rehberg, R

Martin, J

Becker, P

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle, Germany

[2] Phys Tech Bundesanstalt, Fachbereich Expt Forschungsschwerpunkte, D-38116 Braunschweig, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 68卷 / 04期

关键词：

D O I：

10.1007/s003390050915

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vacancy defects in as-grown silicon were observed by positron annihilation. We found a low density of vacancies in float-zone (FZ) silicon, either undoped or lightly nitrogen doped. In contrast, vacancies were less numerous in different Czochralski-grown samples. To obtain a quantitative calibration, electron irradiation with low doses was performed. A vacancy concentration of 1-4 x 10(14) cm(-3) in FZ-Si was obtained.

引用

页码：411 / 416

页数：6

共 35 条

[21] POSITRON-ANNIHILATION AND THE CHARGE STATES OF THE PHOSPHORUS VACANCY PAIR IN SILICON [J].

MAKINEN, J ;

HAUTOJARVI, P ;

CORBEL, C .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1992, 4 (22) :5137-5154

[22] POSITRON TRAPPING RATES AND THEIR TEMPERATURE DEPENDENCIES IN ELECTRON-IRRADIATED SILICON [J].

MASCHER, P ;

DANNEFAER, S ;

KERR, D .

PHYSICAL REVIEW B, 1989, 40 (17) :11764-11771

[23] Defects in electron-irradiated Si studied by positron-lifetime spectroscopy [J].

Polity, A ;

Borner, F ;

Huth, S ;

Eichler, S ;

Krause-Rehberg, R .

PHYSICAL REVIEW B, 1998, 58 (16) :10363-10377

[24] POSITRON TRAPPING IN SEMICONDUCTORS [J].

PUSKA, MJ ;

CORBEL, C ;

NIEMINEN, RM .

PHYSICAL REVIEW B, 1990, 41 (14) :9980-9993

[25] POSITRON STATES IN SI AND GAAS [J].

PUSKA, MJ ;

CORBEL, C .

PHYSICAL REVIEW B, 1988, 38 (14) :9874-9880

[26] DEPENDENCE OF THE GROWN-IN DEFECT DISTRIBUTION ON GROWTH-RATES IN CZOCHRALSKI SILICON [J].

SADAMITSU, S ;

UMENO, S ;

KOIKE, Y ;

HOURAI, M ;

SUMITA, S ;

SHIGEMATSU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3675-3681

[27] Lifetimes of positrons trapped at Si vacancies [J].

Saito, M ;

Oshiyama, A .

PHYSICAL REVIEW B, 1996, 53 (12) :7810-7814

[28]

SEYFRIED P, 1992, Z PHYS B CON MAT, V87, P289, DOI 10.1007/BF01309282

[29] DEPTH AND RADIAL PROFILES OF DEFECTS IN CZOCHRALSKI-GROWN SILICON [J].

SHARMA, SC ;

HYER, RC ;

HOZHABRI, N ;

PAS, MF ;

KIM, S .

APPLIED PHYSICS LETTERS, 1992, 61 (16) :1939-1941

[30] The data treatment influence on the spectra decomposition in positron lifetime spectroscopy .1. On the interpretation of multi-component analysis studied by Monte Carlo simulated model spectra [J].

Somieski, B ;

Staab, TEM ;

KrauseRehberg, R .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 381 (01) :128-140

← 1 2 3 4 →