POSITRON TRAPPING RATES AND THEIR TEMPERATURE DEPENDENCIES IN ELECTRON-IRRADIATED SILICON

被引：148

作者：

MASCHER, P ^{[1
]}

DANNEFAER, S ^{[1
]}

KERR, D ^{[1
]}

机构：

[1] UNIV WINNIPEG,DEPT PHYS,WINNIPEG R3B 2E9,MANITOBA,CANADA

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.40.11764

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11764 / 11771

页数：8

共 30 条

[1] DIVACANCIES PRODUCTION IN IRRADIATED N-TYPE SILICON
AWADELKARIM, OO
[J]. PHYSICA B & C, 1988, 150 (03): : 312 - 318
[2] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON
CORBETT, JW
MCDONALD, RS
WATKINS, GD
[J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +
[3] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
CORBETT, JW
WATKINS, GD
CHRENKO, RM
MCDONALD, RS
[J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &
[4] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON
CORBETT, JW
WATKINS, GD
[J]. PHYSICAL REVIEW, 1965, 138 (2A): : A555 - &
[5] CORBETT JW, 1966, SOLID STATE PHYSIC S, V7, P59
[6] Dannefaer S., 1986, Materials Science Forum, V10-12, P103, DOI 10.4028/www.scientific.net/MSF.10-12.103
[7] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON
DANNEFAER, S
DEAN, GW
KERR, DP
HOGG, BG
[J]. PHYSICAL REVIEW B, 1976, 14 (07): : 2709 - 2714
[8] DEFECTS AND OXYGEN IN SILICON STUDIED BY POSITRONS
DANNEFAER, S
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (02): : 481 - 491
[9] Dannefaer S., 1989, Materials Science Forum, V38-41, P893, DOI 10.4028/www.scientific.net/MSF.38-41.893
[10] ON THE CHARACTER OF DEFECTS IN GAAS
DANNEFAER, S
MASCHER, P
KERR, D
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (20) : 3213 - 3238