DIVACANCIES PRODUCTION IN IRRADIATED N-TYPE SILICON

被引：1

作者：

AWADELKARIM, OO ^{[1
]}

机构：

[1] UNIV READING,JJ THOMPSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND

来源：

PHYSICA B & C | 1988年 / 150卷 / 03期

关键词：

CRYSTALS - Radiation Effects - ELECTRIC LOSSES - Loss Angle Measurement - ELECTRIC MEASUREMENTS - Capacitance - ELECTRONS - SEMICONDUCTOR MATERIALS - Defects;

D O I：

10.1016/0378-4363(88)90069-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Measurements of loss factor and capacitance made on single crystals of P-doped n-type silicon are reported. Samples are irradiated with (1. 00 plus or minus 0. 20) MeV electrons at temperatures less than 12 K. The production of divacancies in the irradiated samples is monitored using hopping conductivity changes at 4. 2 K. Higher divacancy production is observed in Czochralski-grown samples and samples containing appreciable concentrations of group III impurities. This suggests that oxygen and group III impurities trap the self interstitials, mobile under irradiation conditions, thus inhibiting divacancy-self-interstitials annihilation. Effects of irradiation on the free carriers conductivity of the samples are also investigated.

引用

页码：312 / 318

页数：7

共 13 条

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