High-Mobility Aligned Pentacene Films Grown by Zone-Casting

被引:80
作者
Duffy, Claudia M. [1 ]
Andreasen, Jens W. [2 ]
Breiby, Dag W. [3 ]
Nielsen, Martin M. [4 ]
Ando, Masahiko [5 ]
Minakata, Takashi [6 ]
Sirringhaus, Henning [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Optoelect Grp, Cambridge CB3 0HE, England
[2] Tech Univ Denmark, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark
[3] Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway
[4] Univ Copenhagen, Niels Bohr Inst, Ctr Mol Movies, DK-2100 Copenhagen, Denmark
[5] Hitachi Cambridge Lab, Cambridge CB3 0HE, England
[6] Asahi KASEI Corp, R&D Ctr, Fuji, Shizuoka, Japan
基金
新加坡国家研究基金会;
关键词
D O I
10.1021/cm801689f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We investigate the growth and field-effect transistor performance of aligned pentacene thin films deposited by zone-casting from a solution of unsubstituted pentacene molecules in a chlorinated solvent. Polarized optical microscopy shows that solution processed pentacene films grow as large crystalline domains with pronounced anisotropy in the substrate plane, in contrast to vacuum sublimed pentacene films, which consist of small crystalline grains with random in-plane orientation. The high structural alignment is confirmed by in-plane and out-of-plane X-ray diffraction analysis, with out-of-plane 00n reflections up to at least the seventh order, and a pronounced in-plane anisotropy with the a-axis of the triclinic unit cell predominantly aligned parallel to the zone-casting direction and the ab-plane parallel to the substrate. The average charge carrier mobility of the zone-cast pentacene devices depends strongly on the underlying dielectric. Divinylsiloxane-bis-benzocyclobutene (BCB) resin is found to be a suitable gate dielectric allowing reproducible film deposition and high field-effect mobilities up to 0.4-0.7 cm(2)/(V s) and on/off ratios of 10(6)-10(7). A small mobility anisotropy is observed for devices with channels aligned along and perpendicular to the zone-casting direction.
引用
收藏
页码:7252 / 7259
页数:8
相关论文
共 38 条
[11]   Fabrication and field effect transistor characteristics of well-ordered pentacene film [J].
Kihara, H ;
Ueda, Y ;
Unno, A ;
Hirai, T .
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2004, 424 :195-202
[12]   Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane [J].
Killampalli, AS ;
Engstrom, JR .
APPLIED PHYSICS LETTERS, 2006, 88 (14)
[13]   High-mobility organic transistors based on single-crystalline microribbons of triisopropylisilylethynl pentacene via solution-phase self-assembly [J].
Kim, Do Hwan ;
Lee, Dong Yun ;
Lee, Hwa Sung ;
Lee, Wi Hyung ;
Kim, Yong Hoon ;
Han, Jeong In ;
Cho, Kilwon .
ADVANCED MATERIALS, 2007, 19 (05) :678-+
[14]  
Kim H. H., 2007, APPL PHYS LETT, V90
[15]   Pentacene thin film transistors on inorganic dielectrics:: Morphology, structural properties, and electronic transport [J].
Knipp, D ;
Street, RA ;
Völkel, A ;
Ho, J .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) :347-355
[16]   Morphological origin of high mobility in pentacene thin-film transistors [J].
Laquindanum, JG ;
Katz, HE ;
Lovinger, AJ ;
Dodabalapur, A .
CHEMISTRY OF MATERIALS, 1996, 8 (11) :2542-&
[17]   Anisotropic field effect mobility in single crystal pentacene [J].
Lee, J. Y. ;
Roth, S. ;
Park, Y. W. .
APPLIED PHYSICS LETTERS, 2006, 88 (25)
[18]   Solution-processable pentacene microcrystal arrays for high performance organic field-effect transistors [J].
Lee, Wi Hyoung ;
Kim, Do Hwan ;
Jang, Yunseok ;
Cho, Jeong Ho ;
Hwang, Minkyu ;
Park, Yeong Don ;
Kim, Yong Hoon ;
Han, Jeong In ;
Cho, Kilwon .
APPLIED PHYSICS LETTERS, 2007, 90 (13)
[19]   Photochemical stability of pentacene and a substituted pentacene in solution and in thin films [J].
Maliakal, A ;
Raghavachari, K ;
Katz, H ;
Chandross, E ;
Siegrist, T .
CHEMISTRY OF MATERIALS, 2004, 16 (24) :4980-4986
[20]   Identification of polymorphs of pentacene [J].
Mattheus, CC ;
Dros, AB ;
Baas, J ;
Oostergetel, GT ;
Meetsma, A ;
de Boer, JL ;
Palstra, TTM .
SYNTHETIC METALS, 2003, 138 (03) :475-481