Anisotropic field effect mobility in single crystal pentacene

被引：221

作者：

Lee, J. Y. ^{[1
]}

Roth, S.

Park, Y. W.

机构：

[1] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea

[2] Seoul Natl Univ, Nanosyst Inst, Natl Core Res Ctr, Seoul 151747, South Korea

[3] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 25期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2216400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fan-shaped electrodes were designed on Si/SiO2 substrate to measure the anisotropic field effect mobility in freestanding single crystal pentacene. Field effect transistor was fabricated by placing single crystal pentacene on the prepatterned electrodes. The contact between the electrodes and single crystal pentacene was enhanced by applying pressure. Angle dependence of field effect mobility in single crystal pentacene showed remarkably anisotropic behavior. The highest mobility value was estimated to be similar to 2.3 cm(2)/V s at room temperature. (c) 2006 American Institute of Physics.

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页数：3

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