Ultrafast carrier dynamics, optical amplification, and lasing in nanocrystal quantum dots

[1] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1915 - 1921

[2] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J]. PHYSICAL REVIEW B, 1991, 44 (19) : 10945 - 10948

[3] QUASI-CONTINUOUS GAIN IN SOL-GEL DERIVED CDS QUANTUM DOTS [J]. APPLIED PHYSICS LETTERS, 1995, 67 (18) : 2672 - 2674

[4] AUGER IONIZATION OF SEMICONDUCTOR QUANTUM DROPS IN A GLASS MATRIX [J]. JOURNAL OF LUMINESCENCE, 1990, 47 (03) : 113 - 127

[5] EFROS AL, 1995, SOLID STATE COMMUN, V93, P281, DOI 10.1016/0038-1098(94)00780-2

[6] ABSORPTION AND INTENSITY-DEPENDENT PHOTOLUMINESCENCE MEASUREMENTS ON CDSE QUANTUM DOTS - ASSIGNMENT OF THE 1ST ELECTRONIC-TRANSITIONS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1993, 10 (01) : 100 - 107

[7] Optical gain and high quantum efficiency of matrix-free, closely packed CdSe quantum dots [J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2181 - 2183

[8] Intraband relaxation in CdSe quantum dots [J]. PHYSICAL REVIEW B, 1999, 60 (04) : R2181 - R2184

[9] Synthesis and characterization of strongly luminescing ZnS-Capped CdSe nanocrystals [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (02) : 468 - 471

[10] ELECTRON RELAXATION IN A QUANTUM DOT - SIGNIFICANCE OF MULTIPHONON PROCESSES [J]. PHYSICAL REVIEW B, 1992, 46 (11) : 7260 - 7263

[1] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1915 - 1921

[2] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS [J]. PHYSICAL REVIEW B, 1991, 44 (19) : 10945 - 10948

[3] QUASI-CONTINUOUS GAIN IN SOL-GEL DERIVED CDS QUANTUM DOTS [J]. APPLIED PHYSICS LETTERS, 1995, 67 (18) : 2672 - 2674

[4] AUGER IONIZATION OF SEMICONDUCTOR QUANTUM DROPS IN A GLASS MATRIX [J]. JOURNAL OF LUMINESCENCE, 1990, 47 (03) : 113 - 127

[5] EFROS AL, 1995, SOLID STATE COMMUN, V93, P281, DOI 10.1016/0038-1098(94)00780-2

[6] ABSORPTION AND INTENSITY-DEPENDENT PHOTOLUMINESCENCE MEASUREMENTS ON CDSE QUANTUM DOTS - ASSIGNMENT OF THE 1ST ELECTRONIC-TRANSITIONS [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1993, 10 (01) : 100 - 107

[7] Optical gain and high quantum efficiency of matrix-free, closely packed CdSe quantum dots [J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2181 - 2183

[8] Intraband relaxation in CdSe quantum dots [J]. PHYSICAL REVIEW B, 1999, 60 (04) : R2181 - R2184

[9] Synthesis and characterization of strongly luminescing ZnS-Capped CdSe nanocrystals [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (02) : 468 - 471

[10] ELECTRON RELAXATION IN A QUANTUM DOT - SIGNIFICANCE OF MULTIPHONON PROCESSES [J]. PHYSICAL REVIEW B, 1992, 46 (11) : 7260 - 7263