Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm

被引：47

作者：

Markus, A ^{[1
]}

Fiore, A

Ganière, JD

Oesterle, U

Chen, JX

Deveaud, B

Ilegems, M

Riechert, H

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[2] Infineon Technol, Corp Res, D-81730 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 06期

关键词：

D O I：

10.1063/1.1447595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 mum were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but saturate faster as the excitation is increased, due to the lower density of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. (C) 2002 American Institute of Physics.

引用

页码：911 / 913

页数：3

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