Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

被引：108

作者：

Kaschner, A

Lüttgert, T

Born, H

Hoffmann, A

Egorov, AY

Riechert, H

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Infineon Technol, Corp Res, D-81730 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 10期

关键词：

D O I：

10.1063/1.1355014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recombination processes in Ga1-xInxNyAs1-y/GaAs multiple quantum wells (MQWs) were investigated as function of the nitrogen molar fraction. We found a pronounced S-shaped behavior for the temperature-dependent shift of the photoluminescence emission similar to the ternary nitrides InGaN and AlGaN. This is explained by exciton localization at potential fluctuations. Time-resolved measurements at 4 K reveal an increase of the decay time with decreasing emission energy. A model based on lateral transfer processes to lower-energy states is proposed to explain this energy dependence. The formation of tail states in the Ga1-xInxNyAs1-y/GaAs MQWs is attributed to nitrogen fluctuations. (C) 2001 American Institute of Physics.

引用

页码：1391 / 1393

页数：3

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