Geometrical confinement of a domain wall in a nanocontact between two NiFe wires

被引:47
作者
Miyake, K [1 ]
Shigeto, K
Mibu, K
Shinjo, T
Ono, T
机构
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
[2] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan
关键词
D O I
10.1063/1.1436552
中图分类号
O59 [应用物理学];
学科分类号
摘要
A nanocontact structure (typically 22x34 nm(2)) between two NiFe wires was fabricated by an electron-beam lithography and a lift-off method, and the magnetoresistance was measured. The magnetization switching process was artificially controlled by engineering the sample geometry to realize a magnetic structure with a single domain wall (DW) trapped in the nanocontact area. This domain structure was confirmed by magnetic force microscopy observations. The magnetization rotation of 180degrees was realized within the nanocontact area. The contribution of the DW to the resistance was negative, which can be understood on the basis of anisotropic magnetoresistance. (C) 2002 American Institute of Physics.
引用
收藏
页码:3468 / 3470
页数:3
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