Molecular beam epitaxy growth of Sr1-xCuO2-y infinite-layer thin films using a mass-separated low-energy O+ beam

被引：3

作者：

Kawaguchi, K ^{[1
]}

Pindoria, G ^{[1
]}

Kita, R ^{[1
]}

Nishiyama, M ^{[1
]}

Morishita, T ^{[1
]}

机构：

[1] ISTEC,SUPERCONDUCT RES LAB,KOTO KU,TOKYO 135,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 172卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(96)00492-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Conditions for thin film growth of infinite-layer (IL) Sr1-xCuO2-y were systematically investigated in molecular beam epitaxy using a mass-separated low-energy oxygen ion (O+) beam. On (001)SrTiO3, epitaxial growth of single-phase IL was observed at 390 degrees C-460 degrees C with flux ratios Sr/Cu of 0.91 to 1.2 in alternate deposition and simultaneous deposition growths. Thin films grown on (001)BaO under the same conditions had an orientation or a structure different from the IL films on (001)SrTiO3, although the surface structure of (001)BaO is almost the same as that of (001)SrTiO3. The incidence of the O+ ions with kinetic energies larger than 50 eV was found to deteriorate the surface flatness and the crystallinity of the IL films. In the alternate deposition growth, surface reconstructions commensurate and incommensurate to the IL structure were observed for films with terminating depositions of Sr and Cu, respectively.

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页码：156 / 162

页数：7

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