Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition

被引：16

作者：

Mah, KW ^{[1
]}

Mosnier, JP

McGlynn, E

Henry, MO

O'Mahony, D

Lunney, JG

机构：

[1] Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland

[2] Dublin City Univ, Natl Ctr Plasma Sci & Technol, Dublin 9, Ireland

[3] Univ Dublin Trinity Coll, Dept Phys, Dublin 2, Ireland

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 18期

关键词：

D O I：

10.1063/1.1476058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial GaN films of thickness similar to1 mum have been grown on sapphire(0001) and GaAs(001) substrates using the liquid-target pulsed-laser-deposition technique in a 5 Torr nitrogen atmosphere. Detailed x-ray diffraction and photoluminescence studies were carried out for both types of samples. Significantly enhanced low-temperature photoluminescence emissions at 3.368 eV (I-3) and 3.310 eV (I-4) were observed for the material deposited on a GaAs(001) substrate at similar to800 degreesC. We propose a model to explain the emission mechanism for both lines in which the electrons and holes are confined in cubic inclusions within the hexagonal material, analogously to a type-I quantum well. (C) 2002 American Institute of Physics.

引用

页码：3301 / 3303

页数：3

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