Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridation

被引：7

作者：

Deiss, JL ^{[1
]}

Hirlimann, C ^{[1
]}

Loison, JL ^{[1
]}

Robino, M ^{[1
]}

Versini, G ^{[1
]}

机构：

[1] ULP, UMR 7504 CNRS, Opt Nonlineaire & Optoelect Grp, Inst Phys & Chim Mat Strasbourg, F-67037 Strasbourg, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

pulsed laser deposition; gallium nitride; nitridation;

D O I：

10.1016/S0921-5107(00)00779-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin epilayers of GaN have been grown on Al2O3(0001) substrates using a pulsed laser deposition technique. The morphology and crystallinity of the GaN films deposited on pre-nitridated substrates have been controlled by AFM, RHEED and XRD. The purpose of this study was to get a better understanding of the nitridation procedure and of the initial growth stages in order to obtain a reproducible film quality. From these observations, it is seen that the hexagonal GaN epilayers are grown in a 3D mode on some monolayers of 2D-cubic GaN, on top of cubic AIN formed by nitridation. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：68 / 70

页数：3

共 9 条

[1] Study on the initial stages of heteroepitaxial growth of hexagonal GaN on sapphire by plasma assisted MBE [J].