Blue-green light-emitting diodes and violet laser diodes

被引：163

作者：

Nakamura, S

机构：

来源：

MRS BULLETIN | 1997年 / 22卷 / 02期

关键词：

D O I：

10.1557/S088376940003253X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：29 / 35

页数：7

共 39 条

[1] Optically pumped GaN/Al0.1Ga0.9N double-heterostructure ultraviolet laser [J].

Aggarwal, RL ;

Maki, PA ;

Molnar, RJ ;

Liau, ZL ;

Melngailis, I .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (04) :2148-2150

[2] ROOM-TEMPERATURE VIOLET STIMULATED-EMISSION FROM OPTICALLY PUMPED ALGAN/GAINN DOUBLE-HETEROSTRUCTURE [J].

AMANO, H ;

TANAKA, T ;

KUNII, Y ;

KATO, K ;

KIM, ST ;

AKASAKI, I .

APPLIED PHYSICS LETTERS, 1994, 64 (11) :1377-1379

[3] STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER [J].

AMANO, H ;

ASAHI, T ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02) :L205-L206

[4] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[5] Excitonic emissions from hexagonal GaN epitaxial layers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) :2784-2786

[6]

CHICHIBU S, 1996, 38 EL MAT C W 10 JUN

[7]

CRAFORD MG, 1992, CIRCUITS DEVICES SEP, P24

[8] HIGH-BRIGHTNESS BLUE AND GREEN LIGHT-EMITTING-DIODES [J].

EASON, DB ;

YU, Z ;

HUGHES, WC ;

ROLAND, WH ;

BONEY, C ;

COOK, JW ;

SCHETZINA, JF ;

CANTWELL, G ;

HARSCH, WC .

APPLIED PHYSICS LETTERS, 1995, 66 (02) :115-117

[9]

EDMOND J, 1994, I PHYS C SER, V137, P515

[10] VERTICAL-CAVITY STIMULATED-EMISSION FROM PHOTOPUMPED INGAN/GAN HETEROJUNCTIONS AT ROOM-TEMPERATURE [J].

KHAN, MA ;

KRISHNANKUTTY, S ;

SKOGMAN, RA ;

KUZNIA, JN ;

OLSON, DT ;

GEORGE, T .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :520-521

← 1 2 3 4 →