Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition

被引：28

作者：

Wang, LD ^{[1
]}

Kwok, HS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect Engn, Hong Kong, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

关键词：

GaN; AlN; crystallinity;

D O I：

10.1016/S0169-4332(99)00372-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of cubic aluminum nitride (AIN) and cubic gallium nitride (GaN) is studied. The effects of ambient pressure and substrate temperature on the structure of the AlN and GaN films are systematically investigated. It is shown that the films are amorphous when the temperature and the pressure are too low. Cubic AlN is obtained at a temperature of 800 degrees C and a pressure of 0.2 Torr. Cubic GaN can be obtained at 600 degrees C with a cubic AlN buffer layer. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：439 / 443

页数：5

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