Formation of cubic-AlN layer on MgO(100) substrate

被引：23

作者：

Okubo, S

Shibata, N

Saito, T

Ikuhara, Y

机构：

[1] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 456, Japan

[2] Univ Tokyo, Dept Mat Sci, Bunkyo Ku, Tokyo 113, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

AlN; MgO; thin film; ion-assisted MBE; TEM; RHEED;

D O I：

10.1016/S0022-0248(98)00329-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial cubic(c)-AlN(1 0 0) layer has been formed at an interface between hexagonal(h)-AlN film and MgO(1 0 0) substrate by molecular beam epitaxy assisted with electron-cyclotron-resonance plasma excitation. The c-AlN layer observed by TEM was as thin as 3-4 nm. The h-AlN film was [1 0 1]-oriented polycrystalline. On the other hand, epitaxial h-AlN(0 0 1) film has been grown directly on MgO(1 1 1) substrate with the epitaxial relationships of AlN[0 1 0]parallel to MgO[1 1 (2) over bar] and AlN[2 (1) over bar 0]parallel to MgOC[1 (1) over bar 0]. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：452 / 456

页数：5

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