System integration and performance of the EUV engineering test stand

被引：52

作者：

Tichenor, DA ^{[1
]}

Ray-Chaudhuri, AK ^{[1
]}

Replogle, WC ^{[1
]}

Stulen, RH ^{[1
]}

Kubiak, GD ^{[1
]}

Rockett, PD ^{[1
]}

Klebanoff, LE ^{[1
]}

Jefferson, KL ^{[1
]}

Leung, AH ^{[1
]}

Wronosky, JB ^{[1
]}

Hale, LC ^{[1
]}

Chapman, HN ^{[1
]}

Taylor, JS ^{[1
]}

Folta, JA ^{[1
]}

Montcalm, C ^{[1
]}

Soufli, R ^{[1
]}

Spiller, E ^{[1
]}

Blaedel, K ^{[1
]}

Sommargren, GE ^{[1
]}

Sweeney, DW ^{[1
]}

Naulleau, P ^{[1
]}

Goldberg, KA ^{[1
]}

Gullikson, EM ^{[1
]}

Bokor, J ^{[1
]}

Batson, PJ ^{[1
]}

Attwood, DT ^{[1
]}

Jackson, KH ^{[1
]}

Hector, SD ^{[1
]}

Gwyn, CW ^{[1
]}

Yan, PY ^{[1
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94551 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES V | 2001年 / 4343卷

关键词：

EUVL; lithography; multilayer coatings; optical fabrication; optical design; laser-produced plasma; laser plasma source; maglev; magnetic levitation; stages; precision engineering;

D O I：

10.1117/12.436665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase: of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k(1) of 0.52. The illuminator produces 134 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for fullfield images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features.

引用

页码：19 / 37

页数：19

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