Disorder effects in the quantum Hall effect of graphene p-n junctions

被引：42

作者：

Li, Jian ^{[1
]}

Shen, Shun-Qing

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.78.205308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.

引用

页数：7

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