Investigation of pulsed laser deposited crystalline PTFE thin layer with pulsed force mode AFM

被引:14
作者
Kresz, N
Kokavecz, J
Smausz, T
Hopp, B
Csete, A
Hild, S
Marti, O
机构
[1] Univ Szeged, Dept Opt & Quantum Elect, Hungarian Acad Sci, Res Grp Laser Phys, H-6720 Szeged, Hungary
[2] Univ Ulm, Expt Phys Abt, D-89069 Ulm, Germany
关键词
pulsed laser deposition; polytetrafluoroethylene; pulsed force mode atomic force microscopy; adhesion;
D O I
10.1016/j.tsf.2003.11.254
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Teflon thin films were prepared via pulsed laser deposition using an ArF excimer laser (lambda = 193 nm, FWHM = 20 ns) from pressed powder pellets. The applied fluence was 6.25+/-0.23 J/cm(2), the number of pulses was 10 000, the pressure in the vacuum chamber was 2X10(-5) Torr and the substrate temperature was 250 degreesC. The layers were post-annealed at temperature within the range 320-500 degreesC. The atomic force microscopy and pulsed force mode atomic force microscopy (PFM) investigations demonstrated that the effective surface reaches its maximum at 320 degreesC. At higher temperatures (360-500 degreesC) it decreased significantly to an approximately constant value. Measuring the local adhesion the difference between the adhesion forces at 320 and 360 degreesC was kept within the error range. Increasing the annealing temperatures, the adhesion force decreased over the investigated range. Post-annealing of the samples at 360 degreesC resulted in highly crystalline spherulites with lateral dimensions of several hundred micrometers. By optimizing the heating and cooling rate during the annealing the average dimension of spherulites increased and ringed structures were obtained. The PFM measurements showed that the adhesion force increased significantly compared to the similar samples without ringed structures. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:239 / 244
页数:6
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