Reverse biased Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors

被引：51

作者：

Yu, J. ^{[1
]}

Ippolito, S. J. ^{[1
]}

Shafiei, M. ^{[1
]}

Dhawan, D. ^{[1
]}

Wlodarski, W. ^{[1
]}

Kalantar-zadeh, K. ^{[1
]}

机构：

[1] RMIT Univ, Sch Elect & Comp Engn, Sensor Technol Lab, Melbourne, Vic 3001, Australia

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 01期

关键词：

electrical conductivity; gas sensors; hydrogen; MIS devices; molybdenum compounds; nanostructured materials; platinum; scanning electron microscopy; Schottky diodes; silicon compounds; wide band gap semiconductors; X-ray diffraction; THIN-FILMS;

D O I：

10.1063/1.3054164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pt/nanostructured molybdenum oxide (MoO3)/SiC Schottky diode based gas sensors were fabricated for hydrogen (H-2) gas sensing. Due to the enhanced performance, which is ascribed to the application of MoO3 nanostructures, these devices were used in reversed bias. MoO3 characterization by scanning electron microscopy showed morphology of randomly orientated nanoplatelets with thicknesses between 50 and 500 nm. An alpha-beta mixed phase crystallographic structure of MoO3 was characterized by x-ray diffraction. At 180 degrees C, 1.343 V voltage shift in the reverse I-V curve and a Pt/MoO3 barrier height change of 20 meV were obtained after exposure to 1% H-2 gas in synthetic air.

引用

页数：3

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