Positive temperature coefficient resistance and humidity sensing properties of Cd-doped ZnO nanowires

被引：163

作者：

Wan, Q

Li, QH

Chen, YJ

Wang, TH

He, XL

Gao, XG

Li, JP

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Inst Elect, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1707225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cd-doped ZnO nanowires in mass production were synthesized by evaporating metal zinc (Zn) and cadmium (Cd) at 900degreesC. Devices using the synthesized nanowires were fabricated on microstructured substrates. Cd-doped ZnO nanowires show a clear positive temperature coefficient of resistance effect, which is quite abnormal as compared to pure ZnO nanowires. At room temperature, resistance change of more than three orders of magnitude was measured when Cd-doped ZnO nanowire device was exposed to a moisture pulse of 95% relative humidity. (C) 2004 American Institute of Physics.

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页码：3085 / 3087

页数：3

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