Reflectivity of disordered silicon nanowires

被引:57
作者
Street, R. A. [1 ]
Qi, P. [1 ]
Lujan, R. [1 ]
Wong, W. S. [1 ]
机构
[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA
关键词
D O I
10.1063/1.3005585
中图分类号
O59 [应用物理学];
学科分类号
摘要
Disordered silicon nanowire mats have high diffuse optical reflectivity, in striking contrast to the low reflectivity of orientationally ordered nanowires. The reflectivity decreases with increasing photon energy across the visible and near infrared spectrum due to absorption in the nanowires. A simple model is used to estimate that the incident photon interacts with up to 20 nanowires before being reflected. A thin coating of hydrogenated amorphous silicon enhances the nanowire absorption. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3005585].
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页数:3
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