Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN

被引：32

作者：

Wenzel, A ^{[1
]}

Liu, C ^{[1
]}

Rauschenbach, B ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 59卷 / 1-3期

关键词：

defect; doping; GaN; ion implantation; Mg; RBS channeling;

D O I：

10.1016/S0921-5107(98)00409-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN is implanted with 90 keV Mg-ions and afterwards annealed at 1150 degrees C in a rapid thermal annealing furnace. In order to study the dependence of damage generation during implantation on the different implantation parameters, the dose is varied between 1 x 10(14) and 5 x 10(15) Mg+ cm(-2), the substrate temperature during implantation is varied from 25 to 550 degrees C and the ion current density is varied between 0.5 and 20 mu A cm(-2). The defect concentration is examined by Rutherford backscattering spectroscopy/channeling. Up to doses of 2.5 x 10(15) Mg+ cm(-2), the implantation-damage can readily be reduced by annealing. Variation of the ion current density has no influence on defect generation. Implantation at higher temperatures shows an unusual behaviour as it results in an increase in damage. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：191 / 194

页数：4

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