Characterization of Ca and C implanted GaN

被引：22

作者：

Mensching, B

Liu, C

Rauschenbach, B

Kornitzer, K

Ritter, W

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[2] Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany

[3] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

GaN; ion implantation; annealing; doping; simulation;

D O I：

10.1016/S0921-5107(97)00144-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ca+, Ar+ and C+ ions were implanted in molecular beam epitaxy (MBE) grown GaN. Results of Rutherford backscattering (RBS)/channeling measurements are in agreement with simulated distributions of the implanted ions and of the implantation induced damage. Doses higher than 1 x 10(15) cm(-2) result in the formation of heavy damage, which can be partially removed by rapid thermal annealing at 1150 degrees C. After ion implantation followed by annealing, Hall-and Raman-measurements indicate a reduction of the carrier density due to damage caused by the irradiation. Photoluminescence (PL)-measurements show an increase in the intensity of donator-acceptor-pairs compared to the donator-bound exciton. (C) 1997 Elsevier Science S.A.

引用

页码：105 / 108

页数：4

共 15 条

[1] BASIC PHYSICAL ASPECTS OF HIGH-ENERGY IMPLANTATION [J].