Scanning tunneling microscopy observation of the initial state of oxidation in ferromagnetic tunnel junctions

被引：7

作者：

Hayashi, M ^{[1
]}

Ando, Y ^{[1
]}

Miyazaki, T ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 12A期

关键词：

ferromagnetic tunnel junction; TMR; radical oxidation; STM; AFM; local transport;

D O I：

10.1143/JJAP.40.L1317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial oxidation process of thin aluminum films used in ferromagnetic tunnel junctions was investigated-by scanning tunneling microscopy (STM). The STM images reveal the progression of oxygen penetration into an aluminum film composed of small grains. The oxygen first covers the aluminum grain surface homogeneously. At the same time, the oxygen is inserted into the aluminum grain boundaries. As the oxidation proceeds, the oxygen penetrates inside the grain.

引用

页码：L1317 / L1319

页数：3

共 11 条

[1] Local transport property on ferromagnetic tunnel junction measured using conducting atomic force microscope [J].

Ando, Y ;

Kameda, H ;

Kubota, H ;

Miyazaki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (7A) :L737-L739

[2] Local current distribution in a ferromagnetic tunnel junction measured using conducting atomic force microscopy [J].

Ando, Y ;

Kameda, H ;

Kubota, H ;

Miyazaki, T .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :5206-5208

[3] Annealing effect on low-resistance ferromagnetic tunnel junctions [J].

Ando, Y ;

Kubota, H ;

Hayashi, M ;

Kamijo, M ;

Yaoita, K ;

Yu, ACC ;

Han, XF ;

Miyazaki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (10) :5832-5837

[4]

ANDO Y, 2001, IN PRESS J MAGN MAGN

[5] Tunneling phenomena as a probe to investigate atomic scale fluctuations in metal/oxide/metal magnetic tunnel junctions [J].

Da Costa, V ;

Tiusan, C ;

Dimopoulos, T ;

Ounadjela, K .

PHYSICAL REVIEW LETTERS, 2000, 85 (04) :876-879

[6] Nanometric cartography of tunnel current in metal-oxide junctions [J].

Da Costa, V ;

Bardou, F ;

Béal, C ;

Henry, Y ;

Bucher, JP ;

Ounadjela, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6703-6705

[7]

Hayashi M., 2001, Journal of the Magnetics Society of Japan, V25, P759, DOI 10.3379/jmsjmag.25.759

[8]

KURNOSIKOV O, 2001, UNPUB PHYS REV B

[9] Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy [J].

Magtoto, NP ;

Niu, C ;

Ekstrom, BM ;

Addepalli, S ;

Kelber, JA .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2228-2230

[10] GIANT MAGNETIC TUNNELING EFFECT IN FE/AL2O3/FE JUNCTION [J].

MIYAZAKI, T ;

TEZUKA, N .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1995, 139 (03) :L231-L234

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