Quantitative depth profiling of boron in shallow BF2+-implanted silicon by using laser-ionization sputtered neutral mass spectrometry

被引：3

作者：

Higashi, Y ^{[1
]}

Maruo, T ^{[1
]}

Homma, Y ^{[1
]}

Miyake, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期

关键词：

D O I：

10.1116/1.588711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Boron depth profiles in low-energy BF2+-implanted silicon were measured using laser-ionization sputtered neutral mass spectrometry and secondary-ion mass spectrometry. The laser-ionization sputtered neutral mass spectrometry measurements provided more accurate boron profiles in the ultrashallow regions (below 20 nm) than the secondary-ion mass spectrometry measurements. A pileup of boron atoms in the region below 5 nm after annealing was revealed by laser-ionization sputtered neutral mass spectrometry. (C) 1996 American Vacuum Society.

引用

页码：763 / 767

页数：5

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