Urbach energy dependence of the stability in amorphous silicon thin-film transistors

被引：22

作者：

Wehrspohn, RB ^{[1
]}

Deane, SC

French, ID

Gale, IG

Powell, MJ

Brüggemann, R

机构：

[1] Philips Res Labs, Redhill RH1 5HA, Surrey, England

[2] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the relationship between the stability of amorphous silicon thin-film transistors (a-Si:H TFTs) and the bulk properties of a-Si:H films. Threshold voltage shifts in a-Si:H TFTs are characterized by the thermalization energy E-th for different times and temperatures and fitted by {1 + exp[(E-th - E-a)/kT(0)]}(-2). We find that kT(0) exhibits a clear correlation to the Urbach energy, but the more significant parameter E-a seems to depend only on the deposition-induced microstructure and not on the Urbach energy, the hydrogen content, or the hydrogen diffusion coefficient. (C) 1999 American Institute of Physics. [S0003-6951(99)04922-0].

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收藏

页码：3374 / 3376

页数：3

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