Effect of oxygen to argon ratio on growth of Bi4Ti3O12 thin films on Ir and IrO2 prepared by radio-frequency magnetron sputtering

被引：25

作者：

Jo, W ^{[1
]}

Cho, SM ^{[1
]}

Lee, HM ^{[1
]}

Kim, DC ^{[1
]}

Bu, JU ^{[1
]}

机构：

[1] LG Corp Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 5A期

关键词：

bismuth titanate; ferroelectric thin films; Ir and IrO2; microstructure; rf magentron sputtering;

D O I：

10.1143/JJAP.38.2827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth titanate, Bi4Ti3O12. thin films were grown on Ir/SiO2/Si and IrO2/SiO2/Si substrates by radio-frequency magnetron sputtering. Crystallinity and surface morphology of the heterostructures were characterized over a wide range Of oxygen mixing ratio (OMR) during the deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by oxygen content of sputtering ambient. Polarization reversal properties of the BTO films show P-r = +15 mu C/cm(2) and +12 mu C/cm(2), respectively.

引用

页码：2827 / 2830

页数：4

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