PREPARATION OF BISMUTH TITANATE THIN-FILMS BY LASER-ABLATION

被引：28

作者：

WU, WB

FUMOTO, K

OISHI, Y

OKUYAMA, M

HAMAKAWA, Y

机构：

[1] Department of Electrical Engineering, Osaka University, Toyonaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 9B期

关键词：

BI(4)TI(3)O(1)2; THIN FILM; FERROELECTRIC; XRD; LASER ABLATION;

D O I：

10.1143/JJAP.34.5141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric bismuth titanate thin films have been prepared on Si substrates at low temperature by the laser ablation method using an ArF laser. Dependences of crystallographic property of the film on substrate temperature, O-2 gas pressure, laser repetition frequency and annealing temperature are presented. The preferentially c-axis-oriented films have been obtained on Si substrates at a substrate temperature of 400 degrees C with annealing at 700 degrees C, and an Pt substrates at a low substrate temperature of 450 degrees C.

引用

收藏

页码：5141 / 5145

页数：5

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