Fabrication of high-resolution and high-aspect-ratio patterns on a stepped substrate by using scanning probe lithography with a multilayer-resist system

被引：11

作者：

Ishibashi, M ^{[1
]}

Sugita, N ^{[1
]}

Heike, S ^{[1
]}

Kajiyama, H ^{[1
]}

Hashizume, T ^{[1
]}

机构：

[1] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

AFM; SPM; nanolithography; resist; multilayer resist system;

D O I：

10.1143/JJAP.38.2445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high-resolution and high-aspect-ratio resist-patterning method using a. trilayer-resist system with atomic force microscopy (AFM) lithography is described. This system consists of a high-resolution negative-type resist as a top layer, p-Si as an intermediate layer, and an organic resist as a bottom layer. Since the bottom layer planarizes the surface, the patterns can be fabricated on a stepped surface. Using this method, we successfully fabricate 50-nm-wide and 340-nm-thick line-and-space resist patterns on a 200-nm-stepped substrate.

引用

页码：2445 / 2447

页数：3

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