Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy

被引：6

作者：

Adelmann, C

Langer, R

Martinez-Guerrero, E

Mariette, H

Feuillet, G

Daudin, B

机构：

[1] Univ Grenoble 1, CEA Grenoble, Dept Rech Fondamentale Mat Condenseei SPMM, Grenoble 9, France

[2] Univ Grenoble 1, CNRS, Lab Spect Phys, F-38402 St Martin Dheres, France

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 08期

关键词：

D O I：

10.1063/1.371364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The kinetics changes in the growth of GaN induced by the presence of In segregated on the surface have been investigated in situ by using reflection high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely, Ga-polar (0001) wurtzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics, leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth. (C) 1999 American Institute of Physics. [S0021-8979(99)07820-2].

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页码：4322 / 4325

页数：4

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共 10 条

[1] Luminescences from localized states in InGaN epilayers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2822-2824

[2] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[3] Phase separation in InGaN grown by metalorganic chemical vapor deposition [J].

El-Masry, NA ;

Piner, EL ;

Liu, SX ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 1998, 72 (01) :40-42

[4] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[5] Recombination dynamics in InGaN quantum wells [J].

Jeon, ES ;

Kozlov, V ;

Song, YK ;

Vertikov, A ;

Kuball, M ;

Nurmikko, AV ;

Liu, H ;

Chen, C ;

Kern, RS ;

Kuo, CP ;

Craford, MG .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4194-4196

[6] Phase separation in InGaN/GaN multiple quantum wells [J].

McCluskey, MD ;

Romano, LT ;

Krusor, BS ;

Bour, DP ;

Johnson, NM ;

Brennan, S .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1730-1732

[7] Origin of luminescence from InGaN diodes [J].

O'Donnell, KP ;

Martin, RW ;

Middleton, PG .

PHYSICAL REVIEW LETTERS, 1999, 82 (01) :237-240

[8] PREPARATION AND OPTICAL-PROPERTIES OF GA1-XINXN THIN-FILMS [J].

OSAMURA, K ;

NAKA, S ;

MURAKAMI, Y .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3432-3437

[9] Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy [J].

Tarsa, EJ ;

Heying, B ;

Wu, XH ;

Fini, P ;

DenBaars, SP ;

Speck, JS .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) :5472-5479

[10] Improved quality GaN grown by molecular beam epitaxy using In as a surfactant [J].

Widmann, F ;

Daudin, B ;

Feuillet, G ;

Pelekanos, N ;

Rouviere, JL .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2642-2644