First-principles study of BN, SiC, and AlN polytypes

被引:25
作者
Kobayashi, Kazuaki [1 ]
Komatsu, Shojiro [1 ]
机构
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
关键词
polytype; BN; SiC; AlN; first-principles; electronic band structure;
D O I
10.1143/JPSJ.77.084703
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We calculated the electronic and lattice properties of BN, SiC and AlN polytypes. The calculated polytypes, are 2H, 3C (= 3H), 4H, 5H, and 6H. These polytypes are sp(3)-bonded compounds. The 6H polytype has two crystal structures as ABCACB and ABCBCB stacking sequences. The lattice properties were optimized automatically by the first-principles molecular dynamics (FPMD) method. Most calculated electronic band structures of these polytypes are non-metallic and their band gaps are indirect. The most stable BN, SiC and AlN polytypes are 3C-BN, 4H-SiC, and 2H-AlN. respectively. The Calculated total energies of BN polytypes are in the order of 3C < 6H(ABCACB) < 5H < 4H < 6H(ABCBCB) < 2H. The Calculated total energies of SiC polytypes are in the order of 4H < 6H(ABCACB) < 3C < 5H < 6H(ABCBCB) < 2H. The calculated total energies of AlN polytypes are in the order of 2H < 6H(ABCBCB) < 4H < 5H < 6H(ABCACB) < 3C. The total energies and energetical stabilities of the BN and AlN polytypes are related to hexagonality which corresponds to the ratio of the number of third-neighbor cation-anion pairs and the number of cation-anion bilayers in the unit cell. 6H-BN(ABCACB) and 6H-SiC(ABCACB) tire energetically more favorable than 6H-BN(ABCBCB) and 6H-SiC(ABCBCB), respectively. If) contrast, 6H-AlN(ABCBCB) is more favorable than 6H-AlN(ABCACB).
引用
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页数:11
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共 62 条
[11]  
DEMESQUITA AH, 1967, ACTA CRYSTALLOGR, V23, P610
[12]  
Edgar J. H., 1994, EMIS DATAREVIEWS SER
[13]   AB-INITIO CALCULATION OF THE STRUCTURAL AND ELECTRONIC-PROPERTIES OF CARBON AND BORON-NITRIDE USING ULTRASOFT PSEUDOPOTENTIALS [J].
FURTHMULLER, J ;
HAFNER, J ;
KRESSE, G .
PHYSICAL REVIEW B, 1994, 50 (21) :15606-15622
[14]   INHOMOGENEOUS ELECTRON-GAS [J].
RAJAGOPAL, AK ;
CALLAWAY, J .
PHYSICAL REVIEW B, 1973, 7 (05) :1912-1919
[15]   High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy [J].
Horita, Masahiro ;
Suda, Jun ;
Kimoto, Tsunenobu .
APPLIED PHYSICS LETTERS, 2006, 89 (11)
[16]   Enumeration of polytypes MX and MX2 through the use of the symmetry of the Zhdanov symbol [J].
Iglesias, JE .
ACTA CRYSTALLOGRAPHICA SECTION A, 2006, 62 :178-194
[17]   Electronic band structure and X-ray spectra of boron nitride polytypes [J].
Ilyasov, VV ;
Zhdanova, TP ;
Nikiforov, IY .
PHYSICS OF THE SOLID STATE, 2003, 45 (05) :816-824
[18]   First-principles study of the stability of BN and C [J].
Janotti, A ;
Wei, SH ;
Singh, DJ .
PHYSICAL REVIEW B, 2001, 64 (17)
[19]  
*JCPDS INT CTR DIF, 421360 JCPDS
[20]   Ab initio calculation of SiC polytypes [J].
Jiang, ZY ;
Xu, XH ;
Wu, HS ;
Zhang, FQ ;
Jin, ZH .
SOLID STATE COMMUNICATIONS, 2002, 123 (6-7) :263-266