High-quality nonpolar 4H-AlN grown on 4H-SiC (11(2)over-bar20) substrate by molecular-beam epitaxy

被引：35

作者：

Horita, Masahiro ^{[1
]}

Suda, Jun ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.2352713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of very high-quality nonpolar (11 (2) over bar0) a-plane face 4H-AlN on 4H-SiC (11 (2) over bar0) substrate was investigated. Nonpolar 4H-AlN (11 (2) over bar0) was isopolytypically grown on 4H-SiC (11 (2) over bar0) substrate by molecular-beam epitaxy. A reduction of defects such as stacking faults and threading dislocations was achieved by keeping the growing surface flat. To this end, the SiC substrate was HCl gas etched and the V/III ratio was optimized for AlN growth. A full width at half maximum of symmetrical x-ray diffraction omega scan of the 4H-AlN layer was 40 arc sec. Transmission electron microscopy revealed the stacking fault density to be 2x10(5) cm(-1), and the partial and perfect threading dislocation densities to be 7x10(7) and 1x10(7) cm(-2), respectively. (c) 2006 American Institute of Physics.

引用

页数：3

共 15 条

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