Control of the dynamics of photogenerated carriers at the boron-doped diamond electrolyte interface by variation of the surface termination

被引:18
作者
Yagi, I [1 ]
Tsunozaki, K [1 ]
Tryk, DA [1 ]
Fujishima, A [1 ]
机构
[1] Univ Tokyo, Sch Engn, Dept Appl Chem, Tokyo 1138656, Japan
关键词
D O I
10.1149/1.1390870
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The photoelectrochemical response of boron-doped diamond electrode/electrolyte interfaces was examined to establish the influence of the chemical termination at the diamond surface on the dynamics of photogenerated carriers. Photocurrent transients resulting from pulsed excimer laser irradiation at hydrogen-terminated (as-deposited) diamond electrodes and at oxygen-terminated electrodes, which were prepared either by exposing the surface to oxygen plasma or by anodic polarization in an electrolyte solution, were compared. A significant difference between the photocarrier dynamics for these two surfaces was observed in terms of the full width at half-maximum of the photocurrent transients. The much faster decay rate that was observed for the oxygen-terminated surface is attributed to either the depassivation of deep trapping sites due to removal of subsurface hydrogen or to the introduction of defect recombination sites by the oxygen plasma. (C) 1999 The Electrochemical Society. S1099-0062(99)03-024-2. All rights reserved.
引用
收藏
页码:457 / 460
页数:4
相关论文
共 46 条
[1]   Quantum chemical approach to redox reactions including potential dependence: Application to a model for hydrogen evolution from diamond [J].
Anderson, AB ;
Kang, DB .
JOURNAL OF PHYSICAL CHEMISTRY A, 1998, 102 (29) :5993-5996
[2]   Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height [J].
Baumann, PK ;
Bozeman, SP ;
Ward, BL ;
Nemanich, RJ .
DIAMOND AND RELATED MATERIALS, 1997, 6 (2-4) :398-402
[3]   Electron affinity and Schottky barrier height of metal-diamond (100), (111), and (110) interfaces [J].
Baumann, PK ;
Nemanich, RJ .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2072-2082
[4]   Observation of photocurrent from band-to-band excitation of semiconducting p-type diamond thin film electrodes [J].
Boonma, L ;
Yano, T ;
Tryk, DA ;
Hashimoto, K ;
Fujishima, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (06) :L142-L145
[5]   Hydrogen-boron interactions in p-type diamond [J].
Chevallier, J ;
Theys, B ;
Lusson, A ;
Grattepain, C ;
Deneuville, A ;
Gheeraert, E .
PHYSICAL REVIEW B, 1998, 58 (12) :7966-7969
[6]   ELECTRON-AFFINITY OF SINGLE-CRYSTALLINE CHEMICAL-VAPOR-DEPOSITED DIAMOND STUDIED BY ULTRAVIOLET SYNCHROTRON-RADIATION [J].
EIMORI, N ;
MORI, Y ;
HATTA, A ;
ITO, T ;
HIRAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11) :6312-6315
[7]  
Gheeraert E, 1999, PHYS STATUS SOLIDI A, V172, P183, DOI 10.1002/(SICI)1521-396X(199903)172:1<183::AID-PSSA183>3.0.CO
[8]  
2-R
[9]   ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS [J].
GILDENBLAT, GS ;
GROT, SA ;
WRONSKI, CR ;
BADZIAN, AR ;
BADZIAN, T ;
MESSIER, R .
APPLIED PHYSICS LETTERS, 1988, 53 (07) :586-588
[10]   THE EFFECT OF SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES OF METAL CONTACTS TO BORON-DOPED HOMOEPITAXIAL DIAMOND FILM [J].
GROT, SA ;
GILDENBLAT, GS ;
HATFIELD, CW ;
WRONSKI, CR ;
BADZIAN, AR ;
BADZIAN, T ;
MESSIER, R .
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) :100-102