ELECTRON-AFFINITY OF SINGLE-CRYSTALLINE CHEMICAL-VAPOR-DEPOSITED DIAMOND STUDIED BY ULTRAVIOLET SYNCHROTRON-RADIATION

被引：57

作者：

EIMORI, N

MORI, Y

HATTA, A

ITO, T

HIRAKI, A

机构：

[1] Department of Electrical Engineering, Osaka University, Suita, Osaka, 565

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 11期

关键词：

CVD DIAMOND; ELECTRON AFFINITY; SURFACE MODIFICATION; PHOTOYIELD MEASUREMENT; ULTRAVIOLET SYNCHROTRON RADIATION;

D O I：

10.1143/JJAP.33.6312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the electron affinity of (111) and (100) single crystalline surfaces of chemical-vapor-deposited diamond with additional treatments. For specimens exposed to hydrogen plasma (H treatment), the electron affinities are found to be negative from photoyield spectra using ultraviolet synchrotron radiation light, because the threshold energies of photoyield from these specimens are located at an energy of h nu < 5.5 eV, which is the indirect band-gap energy of diamond. The threshold energies of photoyield from surfaces annealed in oxygen atmosphere at 500 degrees C are higher than those from H-treated surfaces. This can be explained in terms of an increase of work function of the oxygen-adsorbed surfaces.

引用

页码：6312 / 6315

页数：4

共 13 条

[1] ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM [J].