Morphology and flexibility of graphene and few-layer graphene on various substrates

被引：130

作者：

Stoeberl, U. ^{[1
]}

Wurstbauer, U. ^{[1
]}

Wegscheider, W. ^{[1
]}

Weiss, D. ^{[1
]}

Eroms, J. ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2968310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on detailed microscopy studies of graphene and few-layer graphene produced by mechanical exfoliation on various semiconducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs, and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopies and compared to layers on SiO2. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity, or roughness. Furthermore resist residues exist on top of graphene after a lithographic step. The obtained results provide the opportunity to research the graphene-substrate interactions. (C) 2008 American Institute of Physics.

引用

页数：3

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