Design and fabrication of submicrometer, single crystal Si accelerometer

被引:34
作者
Weigold, JW [1 ]
Najafi, K [1 ]
Pang, SW [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
关键词
accelerometer; deep etching; electron beam lithography; MEMS; silicon;
D O I
10.1109/84.967374
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A lateral accelerometer has been designed, simulated, and fabricated using a 3-mask high-aspect ratio technology. Electron beam lithography and high-density plasma etching in an inductively coupled plasma source enabled aspect ratios > 30 to be achieved. This makes possible beams with very small spring constants. Combining the ability to measure very small displacement of a proof mass due to narrow capacitive gaps between comb fingers, a highly sensitive accelerometer can be obtained. The fabricated accelerometer with 1 mum beams and 0.2 mum comb gaps had a spring constant of 0.127 N/m, which is close to the calculated values of 0.146 N/m. Based on the capacitance measurements, the accelerometer sensitivity is calculated to be 6.3 Mg. Reducing the beam width to 0.4 mum lowered the spring constant to 0.03 N/m, and an improved equivalent sensitivity of 79.2 fF/g is calculated. The minimum detectable acceleration is on the order of a few microgravity over a range of hundreds of gravities.
引用
收藏
页码:518 / 524
页数:7
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