Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics

被引：8

作者：

Claeys, C

Simoen, E

Poyai, A

Czerwinski, A

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, ESAT, INSYS, B-3001 Louvain, Belgium

[3] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 09期

关键词：

D O I：

10.1149/1.1392491

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The potential for using dedicated p-n junction diode structures as a diagnostic tool for the electrical properties of silicon epitaxial wafers is outlined and experimentally validated. Key parameters of interest are the generation and recombination lifetime of the top layer, and the surface and epi-layer/substrate interface generation (recombination) velocity. Optimized extraction procedures for each of these properties are proposed and potential advantages/drawbacks discussed. (C) 1999 The Electrochemical Society. S0013-4651(99)01-054-X. An rights reserved.

引用

收藏

页码：3429 / 3434

页数：6

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