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MEASUREMENT OF THE EFFECTIVE RECOMBINATION VELOCITY OF SEMICONDUCTOR HIGH-LOW TRANSITIONS
被引:11
作者
:
BELLONE, S
论文数:
0
引用数:
0
h-index:
0
BELLONE, S
CARUSO, A
论文数:
0
引用数:
0
h-index:
0
CARUSO, A
VITALE, G
论文数:
0
引用数:
0
h-index:
0
VITALE, G
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1985年
/ 32卷
/ 09期
关键词
:
D O I
:
10.1109/T-ED.1985.22195
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1771 / 1775
页数:5
相关论文
共 11 条
[1]
ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE
[J].
ARORA, ND
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
ARORA, ND
;
HAUSER, JR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
HAUSER, JR
;
ROULSTON, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
ROULSTON, DJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(02)
:292
-295
[2]
THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS
[J].
CHOO, SC
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235
CHOO, SC
.
SOLID-STATE ELECTRONICS,
1973,
16
(02)
:197
-211
[3]
DUMBAR PM, 1975, SOLID STATE ELECTRON, V18, P715
[4]
AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON
[J].
DZIEWIOR, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
DZIEWIOR, J
;
SCHMID, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
SCHMID, W
.
APPLIED PHYSICS LETTERS,
1977,
31
(05)
:346
-348
[5]
MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS
[J].
GONZALEZ, FN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
GONZALEZ, FN
;
NEUGROSCHEL, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
NEUGROSCHEL, A
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(04)
:413
-416
[6]
EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES
[J].
NING, TH
论文数:
0
引用数:
0
h-index:
0
NING, TH
;
ISAAC, RD
论文数:
0
引用数:
0
h-index:
0
ISAAC, RD
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(11)
:2051
-2055
[7]
EFFECTIVE RECOMBINATION VELOCITY AT THE NN+ INTERFACE
[J].
RAM, GV
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
RAM, GV
;
TYAGI, MS
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
TYAGI, MS
.
SOLID-STATE ELECTRONICS,
1981,
24
(08)
:753
-761
[8]
DETERMINATION OF EFFECTIVE SURFACE RECOMBINATION VELOCITY AND MINORITY-CARRIER LIFETIME IN HIGH-EFFICIENCY SI SOLAR-CELLS
[J].
ROSE, BH
论文数:
0
引用数:
0
h-index:
0
ROSE, BH
;
WEAVER, HT
论文数:
0
引用数:
0
h-index:
0
WEAVER, HT
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(01)
:238
-247
[9]
EFFECT OF HEAVY DOPING ON PROPERTIES OF HIGH-LOW JUNCTION
[J].
SINHA, A
论文数:
0
引用数:
0
h-index:
0
SINHA, A
;
CHATTOPADHYAYA, SK
论文数:
0
引用数:
0
h-index:
0
CHATTOPADHYAYA, SK
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(12)
:1412
-1414
[10]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
[J].
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
;
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
.
SOLID-STATE ELECTRONICS,
1976,
19
(10)
:857
-862
←
1
2
→
共 11 条
[1]
ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE
[J].
ARORA, ND
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
ARORA, ND
;
HAUSER, JR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
HAUSER, JR
;
ROULSTON, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
ROULSTON, DJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(02)
:292
-295
[2]
THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER .2. ANALYTICAL APPROXIMATIONS
[J].
CHOO, SC
论文数:
0
引用数:
0
h-index:
0
机构:
WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235
WESTINGHOUSE RES LABS,PITTSBURGH,PA 15235
CHOO, SC
.
SOLID-STATE ELECTRONICS,
1973,
16
(02)
:197
-211
[3]
DUMBAR PM, 1975, SOLID STATE ELECTRON, V18, P715
[4]
AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON
[J].
DZIEWIOR, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
DZIEWIOR, J
;
SCHMID, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYSIKAL,D-7000 STUTTGART 80,FED REP GER
SCHMID, W
.
APPLIED PHYSICS LETTERS,
1977,
31
(05)
:346
-348
[5]
MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS
[J].
GONZALEZ, FN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
GONZALEZ, FN
;
NEUGROSCHEL, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
NEUGROSCHEL, A
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(04)
:413
-416
[6]
EFFECT OF EMITTER CONTACT ON CURRENT GAIN OF SILICON BIPOLAR-DEVICES
[J].
NING, TH
论文数:
0
引用数:
0
h-index:
0
NING, TH
;
ISAAC, RD
论文数:
0
引用数:
0
h-index:
0
ISAAC, RD
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(11)
:2051
-2055
[7]
EFFECTIVE RECOMBINATION VELOCITY AT THE NN+ INTERFACE
[J].
RAM, GV
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
RAM, GV
;
TYAGI, MS
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,PROGRAM MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA
TYAGI, MS
.
SOLID-STATE ELECTRONICS,
1981,
24
(08)
:753
-761
[8]
DETERMINATION OF EFFECTIVE SURFACE RECOMBINATION VELOCITY AND MINORITY-CARRIER LIFETIME IN HIGH-EFFICIENCY SI SOLAR-CELLS
[J].
ROSE, BH
论文数:
0
引用数:
0
h-index:
0
ROSE, BH
;
WEAVER, HT
论文数:
0
引用数:
0
h-index:
0
WEAVER, HT
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(01)
:238
-247
[9]
EFFECT OF HEAVY DOPING ON PROPERTIES OF HIGH-LOW JUNCTION
[J].
SINHA, A
论文数:
0
引用数:
0
h-index:
0
SINHA, A
;
CHATTOPADHYAYA, SK
论文数:
0
引用数:
0
h-index:
0
CHATTOPADHYAYA, SK
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(12)
:1412
-1414
[10]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
[J].
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
;
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
.
SOLID-STATE ELECTRONICS,
1976,
19
(10)
:857
-862
←
1
2
→